2SB1133 Bipolar Transistor
Characteristics:
- Type: PNP
- Collector-Emitter Voltage: -60 V
- Collector-Base Voltage: -60 V
- Emitter-Base Voltage: -6 V
- Collector Current: -3 A
- Collector Dissipation – 25 W
- DC Current Gain (hfe) – 70 to 280
- Transition Frequency – 40 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C